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Indium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy ( chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds.
A photonic integrated circuit ( PIC) or integrated optical circuit is a microchip containing two or more photonic components that form a functioning circuit. This technology detects, generates, transports, and processes light. Photonic integrated circuits utilize photons (or particles of light) as opposed to electrons that are utilized by ...
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (" zincblende ") crystal structure , identical to that of GaAs and most of the III-V semiconductors .
Félix Houphouët-Boigny National Polytechnic Institute. The Institut National Polytechnique Félix Houphouët-Boigny (INP-HB) is a public polytechnic institute of higher education, research and production in Yamoussoukro in Côte d'Ivoire . It is named after Félix Houphouët-Boigny, the country's first president.
The Integrated National Police ( INP) ( Filipino: Pinagsamang Pulisyáng Pambansà, PPP; Spanish: Policía Nacional Conjunto, PNC) was the municipal police force for the cities and large towns of the Republic of the Philippines. One of two national police forces in the country along with the Philippine Constabulary, it merged with the latter in ...
Indium gallium arsenide phosphide ( Ga x In 1−x As y P 1−y) is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium arsenide, or indium phosphide. This compound has applications in photonic devices, due to the ability to tailor its band gap via changes in the alloy mole ratios, x and y .
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