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The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to ...
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
The estimated date of delivery (EDD), also known as expected date of confinement, [1] and estimated due date or simply due date, is a term describing the estimated delivery date for a pregnant woman. [2] Normal pregnancies last between 38 and 42 weeks. [3] Children are delivered on their expected due date about 4% of the time.
FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl
In textbooks, channel length modulation in active mode usually is described using the Shichman–Hodges model, accurate only for old technology: [2] where = drain current, ′ = technology parameter sometimes called the transconductance coefficient, W, L = MOSFET width and length, = gate-to-source voltage, =threshold voltage, = drain-to-source voltage, =, and λ = channel-length modulation ...
Obstetrics, pediatrics. Large for gestational age (LGA) is a term used to describe infants that are born with an abnormally high weight, specifically in the 90th percentile or above, compared to other babies of the same developmental age. [1][2][3] Macrosomia is a similar term that describes excessive birth weight, but refers to an absolute ...
The tunnel field-effect transistor (TFET) is an experimental type of transistor. Even though its structure is very similar to a metal–oxide–semiconductor field-effect transistor (MOSFET), the fundamental switching mechanism differs, making this device a promising candidate for low power electronics. TFETs switch by modulating quantum ...
2 nm process. In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node. The term "2 nanometer ", or alternatively "20 angstrom " (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or ...
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